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CuGaSe2 solar cell cross section studied by Kelvin probe force microscopy in ultrahigh vacuum

By Th. Glatzel, D. Fuertes Marr n, Th. Schedel Niedrig, S. Sadewasser and M.Ch Lux Steiner

Abstract

Kelvin probe force microscopy KPFM under ultrahigh vacuum UHV conditions has been used to image the electronic structure of a Mo CuGaSe2 CdS ZnO thin film solar cell. Due to the high energy sensitivity with a lateral resolution in the nanometer range we obtained detailed information about the various interfaces within in the heterostructure. The absolute work function of the different materials was measured on a polished cross section. To obtain a flat and clean surface we optimized the sputtering process with Ar ions. The presence of an additional MoSe2 layer between the Mo back contact and the CuGaSe2 absorber layer was observe

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Year: 2002
DOI identifier: 10.1063/1.1506205
OAI identifier: oai:helmholtz.HZB:7555
Provided by: HZB Repository
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