10.1021/jp107043z

Fabrication of ZnO Thin Films from Nanocrystal Inks

Abstract

Zinc oxide nanocrystals were prepared in ethanol and spin-cast to form semiconductor nanocrystal thin films that were thermally annealed at temperatures between 100 and 800 \ub0C. Particle size, monodispersity, and film porosity were determined by X-ray diffraction, ultraviolet-visible absorption spectroscopy, and spectroscopic ellipsometry, respectively. Film porosity rapidly decreased above 400 \ub0C, from 32% to 26%, which coincided with a change in electronic properties. Above 400 \ub0C, the ZnO electron mobility, determined from FET transfer characteristics, increased from 10-3 to 10-1 cm2 V s-1, while the surface resistivity, determined from electrical impedance, decreased from 107 to 103 \u3a9 m over the same temperature range. Below the densification point, nanoparticle core resistivity was found to increase from 104 to 106 \u3a9 m, which is caused by the increasing polydispersity in the quantized energy levels of the nanocrystals. From 100 to 800 \ub0C, crystallite size was found to increase from 5 to 18 nm in diameter. The surface resistance was decreased dramatically by passivation with butane thiol

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