Quasi Ballistic transport in Fully Depleted SOI MOSFETs: the  &quot;kT layer concept revisited

Quasi Ballistic transport in Fully Depleted SOI MOSFETs: the "kT layer concept revisited

By CLERC R, PALESTRI P and SELMI L

Year: 2006

OAI identifier: oai:air.uniud.it:11390/883074

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