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Electron transport in n-doped Si/SiGe quantum cascade structures

By I. Lazic, Z. Ikonic, V. Milanovic, R.W. Kelsall, D. Indjin and P. Harrison


An electron transport model in n-Si/SiGe quantum cascade or superlattice structures is described.\ud The model uses the electronic structure calculated within the effective-mass complex-energy\ud framework, separately for perpendicular (Xz) and in-plane (Xxy) valleys, the degeneracy of which is\ud lifted by strain, and additionally by size quantization. The transport is then described via scattering\ud between quantized states, using a rate equations approach and tight-binding expansion, taking the\ud coupling with two nearest-neighbor periods. Acoustic phonon, optical phonon, alloy disorder, and\ud interface roughness scattering are taken into account. The calculated current/voltage dependence\ud and gain profiles are presented for two simple superlattice structures. © 2007 American Institute of\ud Physics

Publisher: American Institute of Physics
Year: 2007
OAI identifier: oai:eprints.whiterose.ac.uk:2532

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