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Texture effect of neodymium doped gallium oxide thin films on their optical properties

By Céline Lecerf, Philippe Marie, Julien Cardin, François Jomard and Xavier Portier

Abstract

International audienceNeodymium doped b-Ga 2 O 3 films were elaborated on (1 0 0) silicon and (0 0 0 1) sapphire substrates by the radiofrequency magnetron sputtering method. X-ray diffraction, transmission electron microscopy, spectroscopic ellipsometry and photoluminescence measurements were performed to characterize and compare layers elaborated on the two substrates. Also, the Nd content effects were investigated. Films prepared on sapphire substrates were found to form a close orientation relationship with the substrate (À2 0 1) b-Ga 2 O 3 || (0 0 0 1) sapphire, whatever the Nd content in the matrix. By contrast, the films grown on silicon substrates lose this texture for high Nd concentrations with a concomitant decrease of the Nd ions luminescence

Topics: [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], [SPI.MAT]Engineering Sciences [physics]/Materials, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic
Publisher: 'Elsevier BV'
Year: 2011
DOI identifier: 10.1016/j.optmat.2010.10.026
OAI identifier: oai:HAL:hal-01147175v1
Provided by: HAL-CEA
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