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Subgap Collective Tunneling and Its Staircase Structure in Charge Density Waves

By Yu Latyshev, Pierre Monceau, Serguey Brazovskii, A. Orlov and T. Fournier


International audienceTunneling spectra of chain materials NbSe3 and TaS3 were studied in nanoscale mesa devices. Current-voltage I-V characteristics related to all charge density waves (CDWs) reveal universal spectra within the normally forbidden region of low V, below the electronic CDW gap 2. The tunneling always demonstrates a threshold Vt0.2, followed, for both CDWs in NbSe3, by a staircase fine structure. T dependencies of Vt(T) and (T) scale together for each CDW, while the low T values Vt(0) correlate with the CDWs' transition temperatures Tp. Fine structures of CDWs perfectly coincide when scaled along V/. The results evidence the sequential entering of CDW vortices (dislocations) in the junction area with the tunneling current concentrated in their cores. The subgap tunneling proceeds via the phase channel: coherent phase slips at neighboring chains

Topics: [PHYS]Physics [physics]
Publisher: 'American Physical Society (APS)'
Year: 2006
DOI identifier: 10.1103/PhysRevLett.96.116402
OAI identifier: oai:HAL:hal-00022228v1
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