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Doping-induced metal-insulator transition in aluminum-doped 4H silicon carbide

By Philipp Achatz, Julien Pernot, C. Marcenat, Jozef Kacmarcik, Gabriel Ferro and Etienne Bustarret

Abstract

International audienceWe report an experimental determination of the doping-induced metal-insulator transition in aluminum-doped 4H silicon carbide. Low temperature transport measurements down to 360 mK and temperature dependent Raman experiments down to 5 K, together with secondary ion mass spectroscopy profiling, suggest a critical aluminum concentration lying between 6.4 and 8.7 1020 cm−3 for the metal-insulator transition in these epilayers grown by the vapor-liquid-solid technique. Preliminary indications of a superconducting transition in the metallic sample are presented

Topics: [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [PHYS.COND.CM-SCE]Physics [physics]/Condensed Matter [cond-mat]/Strongly Correlated Electrons [cond-mat.str-el]
Publisher: 'AIP Publishing'
Year: 2008
DOI identifier: 10.1063/1.2885081
OAI identifier: oai:HAL:hal-00761033v1
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