Doping-induced metal-insulator transition in aluminum-doped 4H silicon carbide

Achatz, Philipp; Pernot, Julien; Marcenat, C.; Kacmarcik, Jozef; Ferro, Gabriel; Bustarret, Etienne

doi:10.1063/1.2885081

Doping-induced metal-insulator transition in aluminum-doped 4H silicon carbide

By Philipp Achatz, Julien Pernot, C. Marcenat, Jozef Kacmarcik, Gabriel Ferro and Etienne Bustarret

Abstract

International audienceWe report an experimental determination of the doping-induced metal-insulator transition in aluminum-doped 4H silicon carbide. Low temperature transport measurements down to 360 mK and temperature dependent Raman experiments down to 5 K, together with secondary ion mass spectroscopy profiling, suggest a critical aluminum concentration lying between 6.4 and 8.7 1020 cm−3 for the metal-insulator transition in these epilayers grown by the vapor-liquid-solid technique. Preliminary indications of a superconducting transition in the metallic sample are presented

Topics: [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [PHYS.COND.CM-SCE]Physics [physics]/Condensed Matter [cond-mat]/Strongly Correlated Electrons [cond-mat.str-el]

Publisher: 'AIP Publishing'

Year: 2008

DOI identifier: 10.1063/1.2885081

OAI identifier: oai:HAL:hal-00761033v1

Provided by: Hal - Université Grenoble Alpes

Download PDF:
_{Sorry, we are unable to provide the full text but you may find it at the
following location(s):}

https://hal.archives-ouvertes.... (external link)

Doping-induced metal-insulator transition in aluminum-doped 4H silicon carbide

Abstract

Suggested articles