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Intersubband carrier scattering in n- and p-Si/SiGe quantum wells with diffuse interfaces

By A. Valavanis, Z. Ikonic and R.W. Kelsall

Abstract

Scattering rate calculations in two-dimensional Si/Si1−xGex systems have typically been restricted to rectangular Ge profiles at interfaces between layers. Real interfaces however, may exhibit diffuse Ge profiles either by design or as a limitation of the growth process. It is shown here that alloy disorder scattering dramatically increases with Ge interdiffusion in (100) and (111) n-type quantum wells, but remains almost constant in (100) p-type heterostructures. It is also shown that smoothing of the confining potential leads to large changes in subband energies and scattering rates and a method is presented for calculating growth process tolerances

Publisher: The American Physical Society
Year: 2008
OAI identifier: oai:eprints.whiterose.ac.uk:3631

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