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Simulated [111] Si-SiGe terahertz quantum cascade laser

By L. Lever, A. Valavanis, Z. Ikonic and R. W. Kelsall

Abstract

The prospect of developing a silicon laser has long been \ud an elusive goal, mainly due to the indirect band gap and large effective carrier masses. We present a design for a terahertz intersubband laser grown on the [111] crystal plane and simulate performance using a rate equation method including scattering due to alloy disorder, interface roughness, carrier-phonon and Coulombic interactions. We predict gain greater than 40 cm<sup>-</sup>1 and a threshold current density of 70 A/cm<sup>2</sup>.\u

Publisher: American Institute of Physics
Year: 2008
OAI identifier: oai:eprints.whiterose.ac.uk:3632

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