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Excitons with anisotropic effective mass

By A. Schindlmayr

Abstract

We present a simple analytic scheme for calculating the binding energy of excitons in semiconductors that takes full account of the existing anisotropy in the effective mass, as a complement to the qualitative treatment in most textbooks. Results obtained for excitons in gallium nitride form the basis for a discussion of the accuracy of this approach

Year: 1997
DOI identifier: 10.1088/0143-0807
OAI identifier: oai:eprints.whiterose.ac.uk:4037

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