We demonstrate and study a novel process for fabrication of GaAs-based self-aligned lasers based upon a single over-growth. A lattice-matched n-doped InGaP layer is utilized for both electrical and optical confinements. Single-lateral-mode emission is demonstrated initially from an In0.17Ga0.83 As double quantum well laser emitting similar to 980 nm. We then apply the fabrication technique to a quantum dot laser emitting similar to 1300 nm. Furthermore, we analyze the breakdown mechanism in our devices and discuss the limitations of index guiding in our structures
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