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Quantum well and dot self-aligned stripe lasers utilizing an InGaP optoelectronic confinement layer

By K.M Groom, B.J Stevens, P.J Assamoi, J.S Roberts, M Hugues, D.T.D Childs, R.R Alexander, M Hopkinson, A.S Helmy and R.A Hogg

Abstract

We demonstrate and study a novel process for fabrication of GaAs-based self-aligned lasers based upon a single over-growth. A lattice-matched n-doped InGaP layer is utilized for both electrical and optical confinements. Single-lateral-mode emission is demonstrated initially from an In0.17Ga0.83 As double quantum well laser emitting similar to 980 nm. We then apply the fabrication technique to a quantum dot laser emitting similar to 1300 nm. Furthermore, we analyze the breakdown mechanism in our devices and discuss the limitations of index guiding in our structures

Publisher: IEEE
Year: 2009
OAI identifier: oai:eprints.whiterose.ac.uk:8745

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