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Transverse field-induced nucleation pad switching modes during domain wall injection

By M.T. Bryan, P.W. Fry, T. Schrefl, M.R.J. Gibbs, D.A. Allwood, M.Y. Im and P. Fischer

Abstract

We have used magnetic transmission soft X-ray microscopy (M-TXM) to image in-field magnetization configurations of patterned Ni80F20 domain wall "nucleation pads" with attached planar nanowires. Comparison with micromagnetic simulations suggests that the evolution of magnetic domains in rectangular injection pads depends on the relative orientation of closure domains in the remanent state. The magnetization reversal pathway is altered by the inclusion of transverse magnetic fields. These different modes explain previous results of domain wall injection into nanowires

Publisher: Institute of Electrical and Electronics Engineers
Year: 2010
OAI identifier: oai:eprints.whiterose.ac.uk:10757

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