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High mobility holes in a strained Ge quantum well grown on a thin and relaxed Si0.4Ge0.6/LT-Si0.4Ge0.6/Si(001) virtual

By Maksym Myronov, D. R. (David R.) Leadley and Y. Shiraki

Abstract

Epitaxial growth of a compressively strained Ge quantum well (QW) on an ultrathin, 345 nm thick, Si0.4Ge0.6/LT-Si0.4Ge0.6/Si(001) virtual substrate (VS) has been demonstrated. The VS, grown with a low temperature Si0.4Ge0.6 seed layer on a Si(001) substrate, is found to be fully relaxed and the Ge QW is fully strained. The temperature dependence of Hall mobility and carrier density clearly indicates a two-dimensional hole gas in the Ge QW. At room temperature, which is more relevant for electronic devices applications, the samples show a very high Hall mobility of 1235 cm2 V−1 s−1 at a carrier density of 2.36×1012 cm−2

Topics: QC
Publisher: American Institute of Physics
Year: 2009
OAI identifier: oai:wrap.warwick.ac.uk:944

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