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Valence band offset of the ZnO/AlN heterojunction determined by X-ray photoemission spectroscopy

By T. D. (Tim D.) Veal, Philip David King, S. A. Hatfield, L. R. (Laura R.) Bailey, C. F. (Chris F.) McConville, B. Martel, J. C. Moreno, E. Frayssinet, F. Semond and J. Zúñiga-Pérez

Abstract

The valence band offset of ZnO/AlN heterojunctions is determined by high resolution x-ray photoemission spectroscopy. The valence band of ZnO is found to be 0.43±0.17 eV below that of AlN. Together with the resulting conduction band offset of 3.29±0.20 eV, this indicates that a type-II (staggered) band line up exists at the ZnO/AlN heterojunction. Using the III-nitride band offsets and the transitivity rule, the valence band offsets for ZnO/GaN and ZnO/InN heterojunctions are derived as 1.37 and 1.95 eV, respectively, significantly higher than the previously determined values

Topics: QC
Publisher: American Institute of Physics
Year: 2008
OAI identifier: oai:wrap.warwick.ac.uk:947

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