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Reverse graded relaxed buffers for high Ge content SiGe virtual substrates

By V. A. Shah, A. Dobbie, Maksym Myranov, D. J. F. Fulgoni, Lee John Nash and D. R. (David R.) Leadley

Abstract

An innovative approach is proposed for epitaxial growth of high Ge content, relaxed Si1−xGex buffer layers on a Si(001) substrate. The advantages of the technique are demonstrated by growing such structures via chemical vapor deposition and their characterization. Relaxed Ge is first grown on the substrate followed by the reverse grading approach to reach a final buffer composition of 0.78. The optimized buffer structure is only 2.8 µm thick and demonstrates a low surface threading dislocation density of 4×106 cm−2, with a surface roughness of 2.6 nm. The buffers demonstrate a relaxation of up to 107%

Topics: QD, QC
Publisher: American Institute of Physics
Year: 2008
OAI identifier: oai:wrap.warwick.ac.uk:948

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