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Surface electronic properties of undoped InAlN alloys

By Philip David King, T. D. Veal, A. Adikimenakis, H. Lu, L. R. Bailey, E. Iliopoulos, A. Georgakilas, William Joseph Schaff and C. F. McConville

Abstract

The variation in surface electronic properties of undoped c-plane InxAl1−xN alloys has been investigated across the composition range using a combination of high-resolution x-ray photoemission spectroscopy and single-field Hall effect measurements. For the In-rich alloys, electron accumulation layers, accompanied by a downward band bending, are present at the surface, with a decrease to approximately flatband conditions with increasing Al composition. However, for the Al-rich alloys, the undoped samples were found to be insulating with approximate midgap pinning of the surface Fermi level observed

Topics: TK, QC
Publisher: American Institute of Physics
Year: 2008
OAI identifier: oai:wrap.warwick.ac.uk:951

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