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Low temperature mobility in hafnium-oxide gated germanium p-channel metal-oxide-semiconductor field-effect transistors

By C. (Chris) Beer, Terry E. Whall, Evan H. C. Parker, D. R. (David R.) Leadley, Brice De Jaeger, Gareth Nicholas, Paul Zimmerman, Marc Meuris, Slawomir Szostak, Grzegorz Gluszko and Lidia Lukasiak

Abstract

Effective mobility measurements have been made at 4.2 K on high performance high-k gated germanium p-type metal-oxide-semiconductor field effect transistors with a range of Ge/gate dielectric interface state densities. The mobility is successfully modelled by assuming surface roughness and interface charge scattering at the SiO2 interlayer/Ge interface. The deduced interface charge density is approximately equal to the values obtained from the threshold voltage and subthreshold slope measurements on each device. A hydrogen anneal reduces both the interface state density and the surface root mean square roughness by 20%

Topics: TK, QC
Publisher: American Institute of Physics
Year: 2007
OAI identifier: oai:wrap.warwick.ac.uk:967

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