X-ray photoemission spectroscopy determination of the InN/yttria stabilized cubic-zirconia valence band offset

King, Philip David; Veal, T. D. (Tim D.); Hatfield, S. A.; Jefferson, Paul Harvey; McConville, C. F. (Chris F.); Kendrick, C. E.; Swartz, C. H.; Durbin, Steven M.

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oai:wrap.warwick.ac.uk:969

X-ray photoemission spectroscopy determination of the InN/yttria stabilized cubic-zirconia valence band offset

Authors: Philip David King
T. D. (Tim D.) Veal
S. A. Hatfield
Paul Harvey Jefferson
C. F. (Chris F.) McConville
C. E. Kendrick
C. H. Swartz
Steven M. Durbin
Publication date: 10 September 2007
Publisher: American Institute of Physics
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Abstract

The valence band offset of wurtzite InN(0001)/yttria stabilized cubic-zirconia (YSZ)(111) heterojunctions is determined by x-ray photoemission spectroscopy to be 1.19±0.17 eV giving a conduction band offset of 3.06±0.20 eV. Consequently, a type-I heterojunction forms between InN and YSZ in the straddling arrangement. The low lattice mismatch and high band offsets suggest potential for use of YSZ as a gate dielectric in high-frequency InN-based electronic devices

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