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X-ray photoemission spectroscopy determination of the InN/yttria stabilized cubic-zirconia valence band offset

By Philip David King, T. D. (Tim D.) Veal, S. A. Hatfield, Paul Harvey Jefferson, C. F. (Chris F.) McConville, C. E. Kendrick, C. H. Swartz and Steven M. Durbin

Abstract

The valence band offset of wurtzite InN(0001)/yttria stabilized cubic-zirconia (YSZ)(111) heterojunctions is determined by x-ray photoemission spectroscopy to be 1.19±0.17 eV giving a conduction band offset of 3.06±0.20 eV. Consequently, a type-I heterojunction forms between InN and YSZ in the straddling arrangement. The low lattice mismatch and high band offsets suggest potential for use of YSZ as a gate dielectric in high-frequency InN-based electronic devices

Topics: TK, QC
Publisher: American Institute of Physics
Year: 2007
OAI identifier: oai:wrap.warwick.ac.uk:969

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