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Valence band offset of InN/AlN heterojunctions measured by X-ray photoelectron spectroscopy

By Philip David King, T. D. Veal, Paul Harvey Jefferson, C. F. McConville, Tao Wang, P. J. Parbrook, H. Lu and William Joseph Schaff

Abstract

The valence band offset of wurtzite-InN/AlN (0001) heterojunctions is determined by x-ray photoelectron spectroscopy to be 1.52±0.17 eV. Together with the resulting conduction band offset of 4.0±0.2 eV, a type-I heterojunction forms between InN and AlN in the straddling arrangement

Topics: TK, QC
Publisher: American Institute of Physics
Year: 2007
OAI identifier: oai:wrap.warwick.ac.uk:972

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