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Electron dynamics in InNxSb1–x

By I. Mahboob, T. D. (Tim D.) Veal and C. F. (Chris F.) McConville

Abstract

Electron transport properties in InNxSb1–x are investigated for a range of alloy compositions. The band structure of InNxSb1–x is modeled using a modified k·p Hamiltonian. This enables the semiconductor statistics for a given x value to be calculated from the dispersion relation of the E– subband. These calculations reveal that for alloy compositions in the range 0.001<=x<=0.02 there is only a small variation of the carrier concentration at a given plasma frequency. A similar trend is observed for the effective mass at the Fermi level. Measurements of the plasma frequency and plasmon lifetime for InNxSb1–x alloys enable the carrier concentration and the effective mass at the Fermi level to be determined and a lower limit for the electron mobility to be estimated

Topics: TK, QC
Publisher: American Institute of Physics
Year: 2003
OAI identifier: oai:wrap.warwick.ac.uk:987

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