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Effect of hydrogen in dilute InNxSb1–x alloys grown by molecular beam epitaxy

By T. D. (Tim D.) Veal, I. Mahboob, C. F. (Chris F.) McConville, T. M. Burke and T. Ashley

Abstract

The electronic properties and nitrogen bonding configurations are investigated in dilute InNxSb1–x alloys grown by molecular beam epitaxy using a mixed nitrogen and hydrogen plasma. High-resolution electron-energy-loss spectroscopy is used to observe annealing-induced changes in the conduction band electron plasma frequency and plasmon lifetime. X-ray photoelectron spectroscopy of the N 1s core level indicates that a large proportion of the nitrogen in the InNxSb1–x alloy is contained within neutral N–H complexes. Annealing at 300 °C removes hydrogen from these complexes, increasing the concentration of isoelectronic nitrogen acceptors. This increases the ionized impurity scattering and reduces the background conduction electron density

Topics: TK, QC
Publisher: American Institute of Physics
Year: 2003
OAI identifier: oai:wrap.warwick.ac.uk:988

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