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Wave function-dependent mobility and suppression of interface roughness scattering in a strained SiGe p-channel field-effect structure

By Mohammad Ali Sadeghzadeh, A. I. Horrell, O. A. Mironov, Evan H. C. Parker, Terry E. Whall and M. J. Kearney

Abstract

The 4 K Hall mobility has been measured in a top-gated, inverted, modulation-doped Si/Si0.8Ge0.2 structure having a Si:B doping layer beneath the alloy. From comparisons with theoretical calculations, we argue that, unlike an ordinary enhancement-mode SiGe p-channel metal–oxide–semiconductor structure, this configuration leads to a decrease of interface roughness scattering with increasing sheet carrier density. We also speculate on the nature of the interface charge observed in these structures at low temperature

Topics: TK, QC
Publisher: American Institute of Physics
Year: 2000
OAI identifier: oai:wrap.warwick.ac.uk:996

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