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Back gating of a two-dimensional hole gas in a SiGe quantum well

By C. J. Emeleus, Mohammad Ali Sadeghzadeh, P. J. (Peter J.) Phillips, Evan H. C. Parker, Terry E. Whall, M. Pepper and A. G. R. Evans

Abstract

A device comprising a low-resistivity, n-type, Si substrate as a back gate to a p-type (boron), remote-doped, SiGe quantum well has been fabricated and characterized. Reverse and forward voltage biasing of the gate with respect to the two-dimensional hole gas in the quantum well allows the density of holes to be varied from 8 × 1011 cm–2 down to a measurement-limited value of 4 × 1011 cm–2. This device is used to demonstrate the evolution with decreasing carrier density of a re-entrant insulator state between the integer quantum Hall effect states with filling factors 1 and 3

Topics: TK, QC
Publisher: American Institute of Physics
Year: 1997
OAI identifier: oai:wrap.warwick.ac.uk:1022

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