Evidence from ion channeling images for the elastic relaxation of a Si0.85Ge0.15 layer grown on a patterned Si substrate

Abstract

We demonstrate the ability of ion channeling analysis using a scanned, focused, 2 MeV proton beam from a nuclear microprobe to detect and quantify elastic relaxation in a Si1 – xGex layer grown on a Si substrate. Channeling images of a sample consisting of a Si0.85Ge0.15 layer grown on a substrate patterned to produce 10 µm wide raised mesas were produced which revealed lattice plane bending of up to 0.25°, consistent with elastic relaxation of the epilayer. The channeling results are compared with those produced from electron backscattering diffraction