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Evidence from ion channeling images for the elastic relaxation of a Si0.85Ge0.15 layer grown on a patterned Si substrate

By P. J. C. King, Mark B. H. Breese, P. J. M. Smulders, A. J. Wilkinson, G. R. Booker, Evan H. C. Parker and G. W. Grime


We demonstrate the ability of ion channeling analysis using a scanned, focused, 2 MeV proton beam from a nuclear microprobe to detect and quantify elastic relaxation in a Si1 – xGex layer grown on a Si substrate. Channeling images of a sample consisting of a Si0.85Ge0.15 layer grown on a substrate patterned to produce 10 µm wide raised mesas were produced which revealed lattice plane bending of up to 0.25°, consistent with elastic relaxation of the epilayer. The channeling results are compared with those produced from electron backscattering diffraction

Topics: TK, QC
Publisher: American Institute of Physics
Year: 1995
OAI identifier:

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