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Hole effective mass in remote doped Si/Si1−xGex quantum wells with 0.05x0.3

By Terry E. Whall, Andrew D. Plews, Nevil L. Mattey and Evan H. C. Parker

Abstract

The effective masses in remote doped Si/Si1−xGex hole quantum wells with 0.05<=x<=0.3, have been determined from the temperature dependence of the Shubnikov–de Haas oscillations. The values are lower than previously observed by other workers, but still somewhat higher than the theoretical Gamma-point values for the ground-state heavy hole subband. The differences are attributed to finite carrier sheet densities and can be satisfactorily accounted for by nonparabolicity corrections

Topics: TK, QC
Publisher: American Institute of Physics
Year: 1994
OAI identifier: oai:wrap.warwick.ac.uk:1033

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