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Coulomb blockade in silicon based structures at temperatures up to 50 K

By Douglas J. (Professor of Semiconductor Devices)‏ Paul, J. R. A. Cleaver, H. Ahmed and Terry E. Whall

Abstract

Coulomb blockade has been observed in the current-voltage characteristics of structures fabricated in silicon germanium delta-doped material at temperatures up to 50 K. This is consistent with the estimated effective tunnel capacitance of 10 aF which is significantly smaller than the reported capacitances of tunnel junctions made from Al or GaAs/AlGaAs heterostructures

Topics: TK, QC
Publisher: American Institute of Physics
Year: 1993
OAI identifier: oai:wrap.warwick.ac.uk:1036

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