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Growth studies on Si0.8Ge0.2 channel two-dimensional hole gases

By D. W. Smith, C. J. Emeleus, Richard A. A. Kubiak, Evan H. C. Parker and Terry E. Whall

Abstract

We report a study of the influences of MBE conditions on the low-temperature mobilities of Si/Si0.8Ge0.2 2DHG structures. A significant dependence of 2DHG mobility on growth temperature is observed with the maximum mobility of 3640 cm2 V−1 s−1 at 5.4 K being achieved at the relatively high-growth temperature of 640 °C. This dependence is associated with a reduction in interface charge density. Studies on lower mobility samples show that Cu contamination can be reduced both by growth interruptions and by modifications to the Ge source; this reduction produces improvements in the low-temperature mobilities. We suggest that interface charge deriving from residual metal contamination is currently limiting the 4-K mobility

Topics: TK, QC
Publisher: American Institute of Physics
Year: 1992
OAI identifier: oai:wrap.warwick.ac.uk:1038

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