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Concentration of atomic hydrogen diffused into silicon in the temperature range 900–1300 °C

By S. A. McQuaid, R.C. Newman, J. H. Tucker, E. C. Lightowlers, Richard A. A. Kubiak and M. Goulding

Abstract

Boron-doped Czochralski silicon samples with [B]~1017 cm−3 have been heated at various temperatures in the range 800–1300 °C in an atmosphere of hydrogen and then quenched. The concentration of [H-B] pairs was measured by infrared localized vibrational mode spectroscopy. It was concluded that the solubility of atomic hydrogen is greater than [Hs] = 5.6 × 1018 exp( − 0.95 eV/kT)cm−3 at the temperatures investigated

Topics: TK, QC
Publisher: American Institute of Physics
Year: 1991
OAI identifier: oai:wrap.warwick.ac.uk:1040

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