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Elemental boron doping behavior in silicon molecular beam epitaxy

By C. P. Parry, S. M. (Simon M.) Newstead, R. D. Barlow, P. D. Augustus, Richard A. A. Kubiak, M. G. Dowsett, Terry E. Whall and Evan H. C. Parker

Abstract

Boron-doped Si epilayers were grown by molecular beam epitaxy (MBE) using an elemental boron source, at levels up to 2×1020 cm−3, to elucidate profile control and electrical activation over the growth temperature range 450–900 °C. Precipitation and surface segregation effects were observed at doping levels of 2×1020 cm−3 for growth temperatures above 600 °C. At growth temperatures below 600 °C, excellent profile control was achieved with complete electrical activation at concentrations of 2×1020 cm−3, corresponding to the optimal MBE growth conditions for a range of Si/SixGe1−x heterostructures

Topics: TK, QC
Publisher: American Institute of Physics
Year: 1991
OAI identifier: oai:wrap.warwick.ac.uk:1041

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