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Behavior of high dose O+-implanted Si/Ge/Si structures

By J. P. Zhang, Y. S. Tang, A. K. Robinson, U. Bussmann, P. L. F. (Peter L. F.) Hemment, B. Sealy, S. M. (Simon M.) Newstead, A. R. Powell, Terry E. Whall and Evan H. C. Parker

Abstract

The synthesis of a buried oxide layer in multilayer Si/Ge/Si structures by the implantation of high doses of 200 keV O+ ions is studied by Rutherford backscattering analysis. The presence of Ge is found to have a minimal effect upon the mass transport of excess oxygen and interstitial silicon. Infrared transmission spectroscopy and x-ray photoelectron spectroscopy confirm that the oxygen atoms bond preferentially to silicon forming silicon dioxide and SiOx, where x<2, with no evidence for Ge—O bonding

Topics: TK, QC
Publisher: American Institute of Physics
Year: 1990
OAI identifier: oai:wrap.warwick.ac.uk:1043

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