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ESD and ALD Depositions of Ta<sub>2</sub>O<sub>5</sub> Thin Films Investigated as Barriers to Copper Diffusion for Advanced Metallization

By Amélie Lintanf-Salaün, Arnaud Mantoux, Elisabeth Blanquet and Elisabeth Djurado


International audienceDeposits of tantalum oxide thin films on silicon wafer substrates by electrostatic spray deposition (ESD) and atomic layer deposition (ALD) have been studied for their integration as barriers to copper diffusion in interconnect technologies. In the case of ESD, both precursor solution and deposition time have been optimized in order to produce homogeneous films of lowest thickness, T>800°C was studied by transmission electron microscopy. Depending on the thermal treatment, the crystallization occurs with the formation of monoclinic Ta2O5 phase either pure or mixed with a trigonal phase. In the case of ALD, thin-film deposits were optimized as a function of the different parameters of temperature, number of cycles, and tantalum precursor pulse times. As-deposited films were also amorphous but were crystallized in a pure monoclinic Ta2O5 phase after annealing treatment at 980°C. Copper diffusion was tested with high thermal budgets through thin films of T ≥ 700°C. The conformity of such films was examined from deposits realized on patterned substrates

Topics: amorphous state, annealing, atomic layer deposition, copper, crystallisation, diffusion barriers, electrodeposition, high-k dielectric thin films, metallisation, tantalum compounds, transmission electron microscopy, X-ray photoelectron spectra, [CHIM.MATE]Chemical Sciences/Material chemistry
Publisher: 'The Electrochemical Society'
Year: 2009
DOI identifier: 10.1149/1.3086781
OAI identifier: oai:HAL:hal-00384871v1
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