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High field transport of photot-injected electrons in GaAs: Transition from ballistic to drift motion

By Pamela Bowlan, Wilhelm Kuehn, Klaus Reimann, Michael. Woerner, Thomas Elsaesser, R. Hey and Christos Flytzanis

Abstract

Communication oraleInternational audienceUsing visible/NIR pump and strong THz probe pulses, we observe the THz field emitted by accelerated photoelectrons in n-type GaAs. A transition from ballistic to drift motion is observed

Topics: [ PHYS.COND.CM-GEN ] Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other]
Publisher: IEEE, 345 E 47TH ST, NEW YORK, NY 10017 USA
Year: 2011
OAI identifier: oai:HAL:hal-00670890v1
Provided by: Hal-Diderot
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