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Improved effective mobility extraction in MOSFETs

By Stephen M. Thomas, Terry E. Whall, Evan H. C. Parker, D. R. (David R.) Leadley, Robert James Pascoe Lander, G. Vellianitis and J. R. Watling

Abstract

The standard method of extracting carrier effective mobility from electrical measurements on MOSFETs is reviewed and the assumptions implicit in this method are discussed. A novel technique is suggested that corrects for the difference in drain bias during IV and CV measurements. It is further shown that the lateral field and diffusion corrections, which are both commonly neglected, in fact cancel. The effectiveness of the proposed technique is demonstrated by application to data measured on a quasi-planar SOI finFET at 300 K and 4 K

Topics: QC
Publisher: Elsevier
Year: 2009
OAI identifier: oai:wrap.warwick.ac.uk:2719

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Citations

  1. (2006). Schred” doi: 10254/nanohub-r221.3,
  2. (1998). Semiconductor Material and Device Characterization (2 nd doi

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