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Quantum interference effects in p-Si1−xGex quantum wells

By D. R. (David R.) Leadley, V. V. Andrievskii, Igor B. Berkutov, Yuri F. Komnik, T. Hackbarth and O. A. Mironov

Abstract

Quantum interference effects, such as weak localization and electronelectron interaction (EEI), have been investigated in magnetic fields up to 11 T for hole gases in a set of Si1−xGex quantum wells with 0.13 < x < 0.95. The temperature dependence of the hole phase relaxation time has been extracted from the magneto-resistance between 35 mK and 10 K. The spin-orbit effects that can be described within the Rashba model were observed in low magnetic fields. A quadratic negative magneto-resistance was observed in strong magnetic fields, due to the EEI effect. The hole-phonon scattering time was determined from hole overheating in a strong magnetic field

Topics: QC
Publisher: Springer New York LLC
Year: 2010
OAI identifier: oai:wrap.warwick.ac.uk:2813

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Citations

  1. (1985). Electron - Electron Interaction in Disordered Systems. doi
  2. (1979). T.V.Ramakrishnan, doi

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