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High-frequency performance of Schottky source/drain silicon pMOS devices

By J.-P. Raskin, D. J. Pearman, G. Pailloncy, J. M. Larson, J. Snyder, D. R. (David R.) Leadley and Terry E. Whall

Abstract

A radio-frequency performance of 85-nm gate-length p-type Schottky barrier (SB) with PtSi source/drain materials is investigated. The impact of silicidation annealing temperature on the high-frequency behavior of SB MOSFETs is analyzed using an extrinsic small-signal equivalent circuit. It is demonstrated that the current drive and the gate transconductance strongly depend on the silicidation anneal temperature, whereas the unity-gain cutoff frequency of the measured devices remains nearly unchanged

Topics: TK, QC
Publisher: IEEE
Year: 2008
OAI identifier: oai:wrap.warwick.ac.uk:2983

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