A radio-frequency performance of 85-nm gate-length p-type Schottky barrier (SB) with PtSi source/drain materials is investigated. The impact of silicidation annealing temperature on the high-frequency behavior of SB MOSFETs is analyzed using an extrinsic small-signal equivalent circuit. It is demonstrated that the current drive and the gate transconductance strongly depend on the silicidation anneal temperature, whereas the unity-gain cutoff frequency of the measured devices remains nearly unchanged
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