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Modeling of radiation hardness of a CCD with high-speed column parallel readout

By André Sopczak, Salim Aoulmit, Khaled Bekhouche, Chris Bowdery, Craig Buttar, Chris Damerell, Dahmane Djendaoui, Lakhdar Dehimi, Tim Greenshaw, Michal Koziel, Dzmitry Maneuski, Andrei Nomerotski, Konstantin Stefanov, Tuomo Tikkanen, Tim Woolliscroft and Steve Worm

Abstract

Charge Coupled Devices (CCDs) have been successfully used in several high energy physics experiments over the past two decades. Their high spatial resolution and thin sensitive layers make them an excellent tool for studying short-lived particles. The Linear Collider Flavour Identification (LCFI) collaboration is developing Column-Parallel CCDs (CPCCDs) for the vertex detector of a future Linear Collider. The CPCCDs can be read out many times faster than standard CCDs, significantly increasing their operating speed. Radiation hardness is an important aspect in the CCD development. Bulk radiation damage in the silicon leads to electron traps and hence to charge transfer inefficiency (CTI). The effects of the two trap levels 0.17 and 0.44 eV are considered. We have extended our Analytic Model to include the effects of the shape of the signal charge packet and the clock voltage on the CTI determination. The CTI values determined with the Analytic Model largely agree with those from a full TCAD simulation

Publisher: Elsevier BV
Year: 2009
OAI identifier: oai:eprints.gla.ac.uk:123206
Provided by: Enlighten
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