Graphene transport properties are analysed in this thesis. They are strongly dependent on doping with charge carriers. The number of charge carriers can be influenced by electric field, substrate or surface adsorbates. The graphene field-effect transistor (FET) has been prepared. Graphene made by chemical vapor deposition (CVD) has been con tacted through gold structures made by electron beam lithography (EBL). Dependences on electrode configuration, gate voltage and used substrate are observed
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