Skip to main content
Article thumbnail
Location of Repository

Selective growth of GaN on SiN

By Jan Hulva

Abstract

This bachelor's thesis deals with the selective growth of gallium and gallium nitride on silicon nitride (SiN) substrates. Thin silicon nitride layers are deposited on silicon substrates. Oxide structures are prepared by the local anodic oxidation method (LAO) on SiN substrates. These surfaces can be editionally modified by etching in hydrofluoric acid. Modified substrates are used for the deposition of gallium or gallium nitride under ultra-high vacuum conditions. Consequently, ordering of deposited material was studied in areas modified by LAO. Chemical state of layers is studied by X-ray photoelectron spectroscopy. Morphology of surfaces is measured by the atomic force microscope (AFM)

Topics: local anodic oxidation; LAO; nitridace Si; lokální anodická oxidace; nitridation of Si; selektivní růst; gallium; gallium nitride; GaN; silicon nitride; nitrid křemíku; XPS; gallium nitrid; selective growth; SiN
Publisher: Vysoké učení technické v Brně. Fakulta strojního inženýrství
Year: 2012
OAI identifier: oai:invenio.nusl.cz:213073
Download PDF:
Sorry, we are unable to provide the full text but you may find it at the following location(s):
  • http://www.nusl.cz/ntk/nusl-21... (external link)
  • Suggested articles


    To submit an update or takedown request for this paper, please submit an Update/Correction/Removal Request.