This bachelor's thesis deals with the selective growth of gallium and gallium nitride on silicon nitride (SiN) substrates. Thin silicon nitride layers are deposited on silicon substrates. Oxide structures are prepared by the local anodic oxidation method (LAO) on SiN substrates. These surfaces can be editionally modified by etching in hydrofluoric acid. Modified substrates are used for the deposition of gallium or gallium nitride under ultra-high vacuum conditions. Consequently, ordering of deposited material was studied in areas modified by LAO. Chemical state of layers is studied by X-ray photoelectron spectroscopy. Morphology of surfaces is measured by the atomic force microscope (AFM)
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