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Electrode-stress-induced nanoscale disorder in Si quantum electronic devices

By J. Park, Y. Ahn, J. A. Tilka, K. C. Sampson, D. E. Savage, J. R. Prance, C. B. Simmons, M. G. Lagally, S. N. Coppersmith, M. A. Eriksson, M. V. Holt and P. G. Evans

Abstract

Disorder in the potential-energy landscape presents a major obstacle to the more rapid development of semiconductor quantum device technologies. We report a large-magnitude source of disorder, beyond commonly considered unintentional background doping or fixed charge in oxide layers: nanoscale strain fields induced by residual stresses in nanopatterned metal gates. Quantitative analysis of synchrotron coherent hard x-ray nanobeam diffraction patterns reveals gate-induced curvature and strains up to 0.03% in a buried Si quantum well within a Si/SiGe heterostructure. Electrode stress presents both challenges to the design of devices and opportunities associated with the lateral manipulation of electronic energy levels

Topics: Biotechnology, TP248.13-248.65, Physics, QC1-999
Publisher: AIP Publishing LLC
Year: 2016
DOI identifier: 10.1063/1.4954054
OAI identifier: oai:doaj.org/article:3791eeeab5b64a6ea66cbdd6665a1d4a
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