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Current transport mechanism in graphene/AlGaN/GaN heterostructures with various Al mole fractions

By Bhishma Pandit, Tae Hoon Seo, Beo Deul Ryu and Jaehee Cho

Abstract

The current transport mechanism of graphene formed on AlxGa1−xN/GaN heterostructures with various Al mole fractions (x = 0.15, 0.20, 0.30, and 0.40) is investigated. The current–voltage measurement from graphene to AlGaN/GaN shows an excellent rectifying property. The extracted Schottky barrier height of the graphene/AlGaN/GaN contacts increases with the Al mole fraction in AlGaN. However, the current transport mechanism deviates from the Schottky-Mott theory owing to the deterioration of AlGaN crystal quality at high Al mole fractions confirmed by reverse leakage current measurement

Topics: Physics, QC1-999
Publisher: AIP Publishing LLC
Year: 2016
DOI identifier: 10.1063/1.4953917
OAI identifier: oai:doaj.org/article:9ca55d8e56444ada81a8a65d6e92b7e3
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