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Low-power resistive random access memory by confining the formation of conducting filaments

By Yi-Jen Huang, Tzu-Hsien Shen, Lan-Hsuan Lee, Cheng-Yen Wen and Si-Chen Lee

Abstract

Owing to their small physical size and low power consumption, resistive random access memory (RRAM) devices are potential for future memory and logic applications in microelectronics. In this study, a new resistive switching material structure, TiOx/silver nanoparticles/TiOx/AlTiOx, fabricated between the fluorine-doped tin oxide bottom electrode and the indium tin oxide top electrode is demonstrated. The device exhibits excellent memory performances, such as low operation voltage (<±1 V), low operation power, small variation in resistance, reliable data retention, and a large memory window. The current-voltage measurement shows that the conducting mechanism in the device at the high resistance state is via electron hopping between oxygen vacancies in the resistive switching material. When the device is switched to the low resistance state, conducting filaments are formed in the resistive switching material as a result of accumulation of oxygen vacancies. The bottom AlTiOx layer in the device structure limits the formation of conducting filaments; therefore, the current and power consumption of device operation are significantly reduced

Topics: Physics, QC1-999
Publisher: AIP Publishing LLC
Year: 2016
DOI identifier: 10.1063/1.4954974
OAI identifier: oai:doaj.org/article:715c36504f9544e49cbcff3ebc2f3784
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  • https://doaj.org/toc/2158-3226 (external link)
  • http://dx.doi.org/10.1063/1.49... (external link)
  • https://doaj.org/article/715c3... (external link)
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