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IMPULSE PHOTON ANNEALING EFFECT ON STRUCTURE AND PHASE COMPOSITION OF THIN FILM SYSTEMS ON BASIS OF SILICON AND TRANSITION METALS

By M. Markevich, A. Chaplanov and E. Shcherbakova

Abstract

<p>The present paper investigates element composition,  regularities of structural and phase transformations in Si–Fe–Si and TiN–Ti–Si thin film systems in the process of impulse photon annealing depending on radiation energy density while applying such methods as transmission  electron microscopy, electron  diffraction analysis and <a href="http://www.google.com.by/url?sa=t&amp;source=web&amp;cd=2&amp;ved=0CBoQFjAB&amp;url=http%3A%2F%2Fwww.photometrics.net%2Feds.html&amp;ei=UsOlTKPkEJGgOs2xhaYC&amp;usg=AFQjCNGK955MDKODrt9nX78f0isuia1BAg">energy dispersive x-ray microanalysis</a>. Optimum characteristics of impulse photon annealing for formation FeSi<sub>2 </sub>thin films of β-modification on silicon and TiSi<sub>2</sub> films in C54 modification have been determined in the paper.</p

Topics: Technology, T
Publisher: Belarusian National Technical University
Year: 2012
OAI identifier: oai:doaj.org/article:800252b6fe6b4755800fc1a942c440a5
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