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Simulation of V/G During Φ450 mm Czochralski Grown Silicon Single Crystal Growth Under the Different Crystal and Crucible Rotation Rates

By Guan X J and Zhang X Y

Abstract

For discovering the principle of processing parameter combination for the stable growth and better wafer quality of Φ450 mm Czochralski grown silicon single crystal (shortly called Cz silicon crystal), the effects of crystal rotation rate and crucible one on the V/G ratio were simulated by using CGSim software. The results show that their effect laws on the V/G ratio for Φ450 mm Cz silicon crystal growth are some different from that for Φ200 mm Cz silicon one, and the effects of crucible rotation rate are relatively smaller than that of crystal one and its increasing only makes the demarcation point between two regions with different V/G ratio variations outward move along radial direction, and it promotes the wafer quality to weaken crystal rotation rate and strengthen crucible one

Topics: Engineering (General). Civil engineering (General), TA1-2040
Publisher: EDP Sciences
Year: 2016
DOI identifier: 10.1051/matecconf
OAI identifier: oai:doaj.org/article:5cfc59055a1b415abc19933760a87749
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  • https://doaj.org/article/5cfc5... (external link)
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