Inkjet printing of flexible MOS structures based on graphene and high-k dielectrics

Abstract

Màster Oficial en Física Avançada, Facultat de Física, Universitat de Barcelona, Curs: 2014, Tutors: Olga Casals i Albert CireraMOS structures have been inkjet printed using silver, hafnium oxide (HfO2) and reduced graphene oxide (rGO). Main drawbacks with inkjet printing and electrospray deposition have been overcome. C-V characteristics of these devices have been measured and common phenomenology has been established. Deviations from known theory as well as technical improvement have been proposed