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Inkjet printing of flexible MOS structures based on graphene and high-k dielectrics

By Omar Olmedo Ferrer

Abstract

Màster Oficial en Física Avançada, Facultat de Física, Universitat de Barcelona, Curs: 2014, Tutors: Olga Casals i Albert CireraMOS structures have been inkjet printed using silver, hafnium oxide (HfO2) and reduced graphene oxide (rGO). Main drawbacks with inkjet printing and electrospray deposition have been overcome. C-V characteristics of these devices have been measured and common phenomenology has been established. Deviations from known theory as well as technical improvement have been proposed

Topics: Metall-oxid-semiconductors, Impressió digital, Tesis de màster, Metal oxide semiconductors, Digital printing, Masters theses
Year: 2014
OAI identifier: oai:diposit.ub.edu:2445/59961

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