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InGaN Light-Emitting Diode with a Nanoporous/Air-Channel Structure

By Ren-Hao Jiang, Chia-Feng Lin, Chung-Chieh Yang, Feng-Hsu Fan, Yu-Chieh Huang, Wang-Po Tseng, Po-Fu Cheng, Kaun-Chun Wu and Jing-Hao Wang


High-efficiency InGaN light-emitting diode (LED) with an air-channel structure and a nanoporous structure was fabricated. The air-channel structure was formed through an epitaxial regrowth process on a dry-etched undoped GaN nanorod structure. The GaN:Si nanoporous structure embedded in treated LED structures was fabricated through a photoelectrochemical wet etching process in an oxalic acid solution. Light output powers were enhanced 1.48- and 1.75-fold for the LEDs with an air-channel structure and with a nanoporous/air-channel structure, respectively, in comparison with that of a conventional LED structure. The air-channel structure and the nanoporous GaN:Si structure in the treated LED structures provided high-light-extraction structures

Year: 2014
DOI identifier: 10.7567/APEX.6.012103
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