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P-side up AlGaInP-based light emitting diodeswith dot-patterned GaAs contact layers

By Horng RH, Wu BR, Weng CF, Ravadgar P, Wu TM, Wang SP, He JH, Yang TH, Chen YM, Hsu TC, Liu AS and Wuu DS

Abstract

High-brightness p-side up AlGaInP-based red light emitting diodes (LEDs) with dot-patterned GaAs contact layer and surface rough structure are presented in this article. Initial LED structure of p-GaP/AlGaInP/GaAs is epitaxially grown using metal organic chemical vapor deposition technique. Using novel twice transferring process, the p-GaP layer is remained at the top side as both the current spreading and-window layer. Dot patterned GaAs contact dots are formed between main structure and rear mirror to improve light reflection and current spreading. Moreover, the surface of p-GaP window is further textured by nano-sphere lithography technique for improving the light extraction. Significant improvement in output power is found for AlGaInP LEDs with GaAs contact dots and roughened p-GaP window as compared with those of LEDs with traditional n-side up and p-side up structures without roughened surfaces

Year: 2014
DOI identifier: 10.1364/OE.21.019668
OAI identifier: oai:ir.lib.nchu.edu.tw:11455/84759
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