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Uniaxial stress effect and hole mobility in high-Ge content strained SiGe (110)P-channel metal oxide semiconductor field effect transistors

By S.-Y. Cheng, M.H. Lee, S.T. Chang, C.-Y. Lin, K.-T. Chen and B.-F. Hsieh
Topics: Mobility, SiGe, Split capacitance–voltage, Strain, Subband
Year: 2014
OAI identifier: oai:ir.lib.nchu.edu.tw:11455/84718
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