Skip to main content
Article thumbnail
Location of Repository

Uniaxial stress effect and hole mobility in high-Ge content strained SiGe (110)P-channel metal oxide semiconductor field effect transistors

By S.-Y. Cheng, M.H. Lee, S.T. Chang, C.-Y. Lin, K.-T. Chen and B.-F. Hsieh
Topics: Mobility, SiGe, Split capacitance–voltage, Strain, Subband
Year: 2014
OAI identifier:
Download PDF:
Sorry, we are unable to provide the full text but you may find it at the following location(s):
  • (external link)
  • Suggested articles

    To submit an update or takedown request for this paper, please submit an Update/Correction/Removal Request.