INVESTIGATION OF PHOTOELECTRON PROPERTIES OF POROUS SILICON

Abstract

The clarification of laws of recombination processes and photovoltaic effects in porous silicon is the aim of the paper. During the investigation photoluminescence, electron paramagnetic resonance, contact difference of potentials, IR-spectroscopy have been used. As a result models of recombination processes and photovoltaic effects in porous silicon have been formulated. Conditions for the realization of stable photoluminescence in porous silicon have been foundAvailable from VNTIC / VNTIC - Scientific & Technical Information Centre of RussiaSIGLERURussian Federatio