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DEVELOPMENT AND INVESTIGATION OF PRODUCTION PROCESS OF P-TYPE CONDUCTIVITY EPITAXIAL SILICON LAYERS FOR BASE ZONES OF POWER HIGH-VOLTAGE TRANSISTORS BY A LIQUID-PHASE EPITAXY METHOD

By Igor Victorovich Morgunov

Abstract

The investigation objects are the monocrystalline epitaxial silicon films alloyed by a gallium. The aim is to develop the technological process of creting base zones of the transistor structures by a liquid-phase epitaxy method. The production process of the power high-voltage transistors by liquid-phase epitaxy method having the best characteristics in comparison with diffusion analogs has been developed and substantiated. The new model of the epitaxial growing from solution-melt in the clearance which is between horizontal-arranged bases has been proposed. The production bases of the base zones in the structures of the power high-voltage transistory by a liquid-phase epitaxy method have been developedAvailable from VNTIC / VNTIC - Scientific & Technical Information Centre of RussiaSIGLERURussian Federatio

Topics: 09c - null, ELECTRICAL ENGINEERING, ELECTRONICS. RADIO ENGINEERING
Year: 1996
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Provided by: OpenGrey Repository
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