The investigation objects are the monocrystalline epitaxial silicon films alloyed by a gallium. The aim is to develop the technological process of creting base zones of the transistor structures by a liquid-phase epitaxy method. The production process of the power high-voltage transistors by liquid-phase epitaxy method having the best characteristics in comparison with diffusion analogs has been developed and substantiated. The new model of the epitaxial growing from solution-melt in the clearance which is between horizontal-arranged bases has been proposed. The production bases of the base zones in the structures of the power high-voltage transistory by a liquid-phase epitaxy method have been developedAvailable from VNTIC / VNTIC - Scientific & Technical Information Centre of RussiaSIGLERURussian Federatio
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