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DEVELOPMENT OF GROWING TECHNOLOGY AND INVESTIGATION OF PROPERTIES IN EPITAXIAL PROPERTIES OF ALKALINE EARTH FLUORIDES ON SILICON AND GALLIUM ARSENIDE

By Sergey Valentinovich Novikov

Abstract

The work covers the epitaxial alkaline earth fluorides on the semiconductors. The aim is to develop the epitaxial building-up technology of monocrystalline alkaline earth fluorides to make the high-qualitative fluoride-semiconductor heterostructures. The plant has been made and the growing technology of the epitaxial layers for device quality fluorides which can be used in the perspective elements micro- and optoelectronics has been developedAvailable from VNTIC / VNTIC - Scientific & Technical Information Centre of RussiaSIGLERURussian Federatio

Topics: 09A - Components, ELECTRONICS, RADIO ENGINEERING
Year: 1992
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Provided by: OpenGrey Repository
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